Lithographic apparatus and device manufacturing method

ABSTRACT

A lithographic projection system has an illumination system with a polarization member. A plurality of directing elements reflect different sub-beams of an incident beam into adjustable, individually controllable directions. By means of re-directing optics any desired polarized spatial intensity distribution of the beam can be produced in its cross-sectional plane.

FIELD

The present invention relates to a lithographic apparatus and a methodfor manufacturing a device.

BACKGROUND

A lithographic apparatus applies a desired pattern onto a substrate,usually onto a target portion of the substrate. A lithographic apparatuscan be used, for example, in the manufacture of integrated circuits(ICs). In that instance, a patterning device, which is alternativelyreferred to as a mask or a reticle, may be used to generate a circuitpattern to be formed on an individual layer of the IC. This pattern canbe transferred onto a target portion (e.g. comprising part of, one, orseveral dies) on a substrate (e.g. a silicon wafer). Transfer of thepattern is typically via imaging onto a layer of radiation-sensitivematerial (resist) provided on the substrate. In general, a singlesubstrate will contain a network of adjacent target portions that aresuccessively patterned. Known lithographic apparatus include so-calledsteppers, in which each target portion is irradiated by exposing anentire pattern onto the target portion at one time, and so-calledscanners, in which each target portion is irradiated by scanning thepattern through a radiation beam in a given direction (the“scanning”-direction) while synchronously scanning the substrateparallel or anti-parallel to this direction. It is also possible totransfer the pattern from the patterning device to the substrate byimprinting the pattern onto the substrate.

A lithographic apparatus generally includes an illumination system,referred to hereafter as an illuminator. The illuminator receivesradiation from a source, for example a laser, and produces anillumination beam for illuminating a patterning device. Within a typicalilluminator, the beam is shaped and controlled such that at a pupilplane the beam has a desired spatial intensity distribution, alsoreferred to as an illumination mode. Examples of types of illuminationmodes are conventional, dipole, asymmetric, quadrupole, hexapole andannular illumination modes. This spatial intensity distribution at thepupil plane effectively acts as a secondary radiation source forproducing the illumination beam. Following the pupil plane, theradiation is typically focused by an optical element (e.g., lens) groupreferred to hereafter as “coupling optics”. The coupling optics couplesthe focused radiation into an integrator, such as a quartz rod. Thefunction of the integrator is to improve the homogeneity of the spatialand/or angular intensity distribution of the illumination beam. Thespatial intensity distribution at the pupil plane is converted to anangular intensity distribution at the object being illuminated by thecoupling optics, because the pupil plane substantially coincides withthe front focal plane of the coupling optics. Controlling the spatialintensity distribution at the pupil plane can be done to improve theprocessing latitudes when an image of the illuminated object isprojected onto a substrate. In particular, spatial intensitydistributions with dipolar, annular or quadrupole off-axis illuminationmodes have been proposed to enhance the resolution and/or otherparameters of the projection, such as sensitivity to projection lensaberrations, exposure latitude and depth of focus.

Furthermore, the beam may be polarized. Using a correctly polarized beammay enhance image contrast and/or improve exposure latitude. Theseeffects may result in an improved dimension uniformity of the imagedfeatures. This eventually leads to an improved yield of the product.There is especially a need for a polarized beam in a lithographyapparatus with a high numerical aperture (NA) that images densely packedfeatures having widths far below the wavelength of the used radiationbeam.

A conventional lithographic apparatus has a possible drawback thatpolarized illumination modes wherein different areas of the pupil havedifferent polarization directions cannot be created flexibly. Although apolarizer could be placed in a pupil plane of the illuminator, thisrequires expensive and bulky polarizing elements. The handlers requiredfor such plates are also large. Furthermore, for several polarizedillumination modes a unique polarizing element is required, making fastswitching of illumination modes during normal operation of thelithographic apparatus difficult, if not impossible.

SUMMARY

Accordingly, it would be advantageous, for example, to provide alithography apparatus and a device manufacturing method configured tocreate polarized illumination modes with increased flexibility.

According to a first aspect of the invention, there is provided Alithographic projection apparatus comprising:

-   -   an illumination system comprising:        -   an array of reflective elements configured to define an            intensity distribution of a radiation beam in accordance            with an illumination mode, and        -   a polarization member positioned before the array of            reflective elements in a path of the beam, the polarization            member configured to provide a polarization to the beam of            radiation;    -   a support structure configured to support a patterning device,        the patterning device configured to pattern the beam according        to a desired pattern;    -   a substrate table configured to hold a substrate; and    -   a projection system configured to project the patterned beam        onto a target portion of the substrate.

In an embodiment, the polarization member comprises at least tworegions, a first region being associated with a first set selected outof the reflective elements and a second region being associated with asecond set selected out of the reflective elements, the first setdifferent from the second set, wherein at least one of the regionscomprises an optical element to obtain polarization in a part of thebeam passing the at least one region, whereby the first and second setsof reflective elements are selected to obtain a polarized illuminationmode. The polarization member may be moveable using a device to changeselection of reflective elements in the first and the second sets toobtain a further polarized illumination mode. The optical element may bea circular polarizer or linear polarizer.

In a further embodiment, the polarization member comprises an array ofregions, at least one region having a dimension such that the reflectiveelements are in the first set.

In a further embodiment, the lithographic apparatus further comprises aradiation system configured to generate a beam of linearly polarizedradiation. In this embodiment, the optical element is a quarter-waveplate, half-wave plate or a wedge.

In a further embodiment, the first region and second region of thepolarization member are incorporated in a single optical structure.

In a further embodiment, the illumination system further comprisesconcentrating optics configured to concentrate a part of the beam ontoone or more of the reflective elements. The concentrating optics maycomprise a reflective surface area having a parabolic or hyperboliccross-sectional shape or an array of hyperbolic or parabolic reflectivesurfaces. The concentrating optics may comprise a micro-lens array.

In a further embodiment, the polarization member is located before theconcentrating optics. The polarization member may be located between theconcentrating optics and the reflective elements.

In a further embodiment, a reflector plate is configured to support oneor more of the reflective elements and a setting plate including a pinassociated with each such reflective element configured to set theorientation of the reflective element.

In a further embodiment, the illumination mode includes any of thefollowing: conventional, dipole, asymmetric, quadrupole, hexapole andannular.

In a further embodiment, there is provided a polarization membercomprising an array of polarization regions for use in a lithographicprojection apparatus.

According to a second aspect of the present invention, there is providedA device manufacturing method, comprising:

-   -   dividing a beam of radiation into multiple sub-beams;    -   polarizing at least one of the sub-beams into a polarized mode        using a polarization member;    -   associating each sub-beam with a reflective element of a        plurality of reflective elements;    -   directing the respective sub-beams to a patterning device via        the reflective elements to obtain a polarized illumination mode;    -   using the patterning device to endow the beam with a pattern in        its cross-section; and    -   projecting the patterned beam onto at least a part of a        radiation-sensitive material of a substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will now be described, by way of exampleonly, with reference to the accompanying schematic drawings in whichcorresponding reference symbols indicate corresponding parts, and inwhich:

FIG. 1 shows a lithographic apparatus according to an embodiment of theinvention;

FIG. 2 shows an illumination system of a first embodiment of theinvention;

FIG. 3 a shows an array of reflective elements and a polarization membercomprising one polarizing region according to a further embodiment ofthe invention;

FIG. 3 b shows a pupil plane with an illumination mode comprising apolarized dipole and an unpolarized conventional small-σ componentaccording to a further embodiment of the invention;

FIG. 4 a shows an array of reflective elements and a polarization membercomprising two polarizing regions according to a further embodiment ofthe invention;

FIG. 4 b shows a pupil plane with a polarized quadrupole illuminationmode according to a further embodiment of the invention;

FIG. 5 a shows an array of reflective elements and a polarization membercomprising two polarizing regions according to a further embodiment ofthe invention;

FIG. 5 b shows a pupil plane with a further polarized quadrupoleillumination mode according to a further embodiment of the invention;

FIG. 6 a shows an array of reflective elements and a polarization membercomprising an array of eight polarizing regions according to a furtherembodiment of the invention;

FIG. 6 b shows a pupil plane with a polarized annular illumination modeaccording to a further embodiment of the invention;

FIG. 7 a shows an array of reflective elements and a polarization membercomprising an array of eight polarizing regions according to a furtherembodiment of the invention;

FIG. 7 b shows a pupil plane with an illumination mode comprising alinearly polarized quadrupole component and a circularly polarizedconventional small-σ component according to a further embodiment of theinvention;

FIG. 8 shows an illumination system according to a further embodiment ofthe invention;

FIG. 9 a shows a single reflective element and its support and actuatorsin a first mode of operation according to a further embodiment of theinvention; and

FIG. 9 b shows a single reflective element and its support and actuatorsin a second mode of operation according to a further embodiment of theinvention.

DETAILED DESCRIPTION

FIG. 1 schematically shows a lithographic apparatus according to oneembodiment of the invention. The apparatus comprises:

an illumination system (illuminator) IL configured to condition aradiation beam B (e.g. UV radiation or DUV radiation);

a support structure (e.g. a mask table) MT constructed to support apatterning device (e.g. a mask) MA and connected to a first positionerPM configured to accurately position the patterning device in accordancewith certain parameters;

a substrate table (e.g. a wafer table) WT constructed to hold asubstrate (e.g. a resist-coated wafer) W and connected to a secondpositioner PW configured to accurately position the substrate inaccordance with certain parameters; and

a projection system (e.g. a refractive projection lens system) PSconfigured to project a pattern imparted to the radiation beam B bypatterning device MA onto a target portion C (e.g. comprising one ormore dies) of the substrate W.

The illumination system may include various types of optical components,such as refractive, reflective, magnetic, electromagnetic, electrostaticor other types of optical components, or any combination thereof, fordirecting, shaping, or controlling radiation.

The support structure holds the patterning device in a manner thatdepends on the orientation of the patterning device, the design of thelithographic apparatus, and other conditions, such as for examplewhether or not the patterning device is held in a vacuum environment.The support structure can use mechanical, vacuum, electrostatic or otherclamping techniques to hold the patterning device. The support structuremay be a frame or a table, for example, which may be fixed or movable asrequired. The support structure may ensure that the patterning device isat a desired position, for example with respect to the projectionsystem. Any use of the terms “reticle” or “mask” herein may beconsidered synonymous with the more general term “patterning device.”

The term “patterning device” used herein should be broadly interpretedas referring to any device that can be used to impart a radiation beamwith a pattern in its cross-section such as to create a pattern in atarget portion of the substrate. It should be noted that the patternimparted to the radiation beam may not exactly correspond to the desiredpattern in the target portion of the substrate, for example if thepattern includes phase-shifting features or so called assist features.Generally, the pattern imparted to the radiation beam will correspond toa particular functional layer in a device being created in the targetportion, such as an integrated circuit.

The patterning device may be transmissive or reflective. Examples ofpatterning devices include masks, programmable mirror arrays, andprogrammable LCD panels. Masks are well known in lithography, andinclude mask types such as binary, alternating phase-shift, andattenuated phase-shift, as well as various hybrid mask types. An exampleof a programmable mirror array employs a matrix arrangement of smallmirrors, each of which can be individually tilted so as to reflect anincoming radiation beam in different directions. The tilted mirrorsimpart a pattern in a radiation beam which is reflected by the mirrormatrix.

The term “projection system” used herein should be broadly interpretedas encompassing any type of projection system, including refractive,reflective, catadioptric, magnetic, electromagnetic and electrostaticoptical systems, or any combination thereof, as appropriate for theexposure radiation being used, or for other factors such as the use ofan immersion liquid or the use of a vacuum. Any use of the term“projection lens” herein may be considered as synonymous with the moregeneral term “projection system”.

As here depicted, the apparatus is of a transmissive type (e.g.employing a transmissive mask). Alternatively, the apparatus may be of areflective type (e.g. employing a programmable mirror array of a type asreferred to above, or employing a reflective mask).

The lithographic apparatus may be of a type having two (dual stage) ormore substrate tables (and/or two or more support structures). In such“multiple stage” machines the additional tables may be used in parallel,or preparatory steps may be carried out on one or more tables while oneor more other tables are being used for exposure.

The lithographic apparatus may also be of a type wherein at least aportion of the substrate may be covered by a liquid having a relativelyhigh refractive index, e.g. water, so as to fill a space between theprojection system and the substrate. An immersion liquid may also beapplied to other spaces in the lithographic apparatus, for example,between the mask and the projection system. Immersion techniques arewell known in the art for increasing the numerical aperture ofprojection systems. The term “immersion” as used herein does not meanthat a structure, such as a substrate, must be submerged in liquid, butrather only means that liquid is located between the projection systemand the substrate during exposure.

Referring to FIG. 1, the illuminator IL receives a radiation beam from aradiation source SO. The source and the lithographic apparatus may beseparate entities, for example when the source is an excimer laser. Insuch cases, the source is not considered to form part of thelithographic apparatus and the radiation beam is passed from the sourceSO to the illuminator IL with the aid of a beam delivery system BDcomprising, for example, suitable directing mirrors and/or a beamexpander. In other cases the source may be an integral part of thelithographic apparatus, for example when the source is a mercury lamp.The source SO and the illuminator IL, together with the beam deliverysystem BD if required, may be referred to as a radiation system.

The illuminator IL may comprise an adjuster AD configured to adjust theangular intensity distribution of the radiation beam. Generally, atleast the outer and/or inner radial extent (commonly referred to asσ-outer and σ-inner, respectively) of the intensity distribution in apupil plane of the illuminator can be adjusted. In addition, theilluminator IL may comprise various other components, such as anintegrator IN and a condenser CO. The illuminator may be used tocondition the radiation beam, to have a desired uniformity and intensitydistribution in its cross-section.

The radiation beam B is incident on the patterning device (e.g., mask)MA, which is held on the support structure (e.g., mask table) MT, and ispatterned by the patterning device. Having traversed the patterningdevice MA, the radiation beam B passes through the projection system PS,which focuses the beam onto a target portion C of the substrate W. Withthe aid of the second positioner PW and position sensor IF (e.g. aninterferometric device, linear encoder or capacitive sensor), thesubstrate table WT can be moved accurately, e.g. so as to positiondifferent target portions C in the path of the radiation beam B.Similarly, the first positioner PM and another position sensor (which isnot explicitly depicted in FIG. 1) can be used to accurately positionthe patterning device MA with respect to the path of the radiation beamB, e.g. after mechanical retrieval from a mask library, or during ascan. In general, movement of the support structure MT may be realizedwith the aid of a long-stroke module (coarse positioning) and ashort-stroke module (fine positioning), which form part of the firstpositioner PM. Similarly, movement of the substrate table WT may berealized using a long-stroke module and a short-stroke module, whichform part of the second positioner PW. In the case of a stepper (asopposed to a scanner) the support structure MT may be connected to ashort-stroke actuator only, or may be fixed. Patterning device MA andsubstrate W may be aligned using patterning device alignment marks M1,M2 and substrate alignment marks P1, P2. Although the substratealignment marks as illustrated occupy dedicated target portions, theymay be located in spaces between target portions (these are known asscribe-lane alignment marks). Similarly, in situations in which morethan one die is provided on the patterning device MA, the patterningdevice alignment marks may be located between the dies.

The depicted apparatus could be used in at least one of the followingmodes:

1. In step mode, the support structure MT and the substrate table WT arekept essentially stationary, while an entire pattern imparted to theradiation beam is projected onto a target portion C at one time (i.e. asingle static exposure). The substrate table WT is then shifted in the Xand/or Y direction so that a different target portion C can be exposed.In step mode, the maximum size of the exposure field limits the size ofthe target portion C imaged in a single static exposure.

2. In scan mode, the support structure MT and the substrate table WT arescanned synchronously while a pattern imparted to the radiation beam isprojected onto a target portion C (i.e. a single dynamic exposure). Thevelocity and direction of the substrate table WT relative to the supportstructure MT may be determined by the (de-)magnification and imagereversal characteristics of the projection system PS. In scan mode, themaximum size of the exposure field limits the width (in the non-scanningdirection) of the target portion in a single dynamic exposure, whereasthe length of the scanning motion determines the height (in the scanningdirection) of the target portion.

3. In another mode, the support structure MT is kept essentiallystationary holding a programmable patterning device, and the substratetable WT is moved or scanned while a pattern imparted to the radiationbeam is projected onto a target portion C. In this mode, generally apulsed radiation source is employed and the programmable patterningdevice is updated as required after each movement of the substrate tableWT or in between successive radiation pulses during a scan. This mode ofoperation can be readily applied to maskless lithography that utilizesprogrammable patterning device, such as a programmable mirror array of atype as referred to above.

Combinations and/or variations on the above described modes of use orentirely different modes of use may also be employed.

FIG. 2 shows an example of an illuminator. The illuminator comprises inthis order a radiation source 11, for example a Hg-lamp or laser, beamdiverging optics 12, a polarization member 13, an array of reflectiveelements 14 and redirecting optics 15. In operation, the radiationsource generates a collimated beam which is directed to the array ofreflective elements via the beam diverging optics and the polarizationmember. The beam diverging optics expands the beam into a number ofsub-beams, associating each of the sub-beams with a reflective elementof array 14 of reflective elements 14 a, 14 b, 14 c, 14 d, 14 e. Thebeam diverging optics 12 renders collimated beams. The cross-section ofthe expanded beam is sufficient that the beam is incident at all or asubset of reflective elements 14 a to 14 e. FIG. 2 shows, by way ofexample, three sub-beams of the expanded beam. The beam diverging opticsmay additionally include a positive lens or lens array for setting thedivergence of the sub-beams. The polarization member polarizes the beamin a certain polarization state and is located at or near a planeoptically conjugate to the array of reflective elements 14. Thepolarization state may be a linear polarization or a circularpolarization. The polarization member may comprise any number ofpolarizing elements, for example one or more absorptive polarizers orbeam-splitting polarizers.

FIG. 2 shows a first sub-beam incident at reflective element 14 b. Likethe other reflective elements 14 a and 14 c to 14 e of the array 14, thereflective element 14 b reflects the sub-beam to an intermediate plane16 via re-directing optics 15. The re-directing optics, for example afocusing lens, directs the sub-beam to a desired area in theintermediate plane of the illuminator. The cross-sectional plane 16 maycoincide with the pupil plane which acts as a secondary radiation source(as described above). Furthermore, the reflective elements 14 c, 14 dreflect the other two sub-beams shown to other areas of plane 16 via there-directing optics 15. By adjusting the orientations of the reflectiveelements 14 a to 14 e and thus determining the areas of plane 16 onwhich the sub-beams are incident, almost any spatial intensitydistribution in the cross-sectional plane 16 can be produced.

The lithographic apparatus may be provided with a device 17 to move thepolarization member 13 in or out of the sub beams. The device can be,e.g., a linear motor, allowing a fast change in illumination mode.Referring to FIG. 3 a. in this embodiment, the polarization member 30 isinserted only partially in the plurality of sub-beams, causing only afraction of the sub-beams to be polarized. FIG. 3 a shows a division ofthe beam in a first set of sub-beams having a linear polarizationdirected substantially parallel to the X-axis and a second set ofunpolarized sub-beams.

FIG. 3 b shows a pupil plane 33 with an illumination mode comprising apolarized dipole components (or poles) 31 a and 31 b and an unpolarizedconventional small-σ component 32 that can be obtained using theconfiguration as described with respect to FIG. 3 a. One or more of thereflective elements 14 direct the sub-beams passing through thepolarization member 13 to the locations in the pupil plane 33 to createthe poles 31 a and 31 b. One or more of the reflective elements 14direct the sub-beams not passing through the polarization member 13 tothe locations in the pupil plane 33 to create the unpolarized centerpole 32.

The polarization member may comprise a plurality of polarization regionsto create various types of polarized illumination modes with more thanone polarization direction and/or polarization type, for exampleillumination modes comprising both poles that are horizontally polarizedand poles that are vertically polarized.

FIG. 4 a shows an example of a polarization member comprising twopolarization regions 41 and 44, wherein the polarization region 41comprises a polarizer passing substantially only radiation with apolarization in a first direction and the polarization region 44comprises a polarizer passing substantially only radiation with apolarization in a second direction. The second direction may beperpendicular to the first direction. Alternatively, the angle betweenthe first and second directions may be 45 degrees. FIG. 4 b shows thepupil plane 33 with a polarized quadrupole illumination mode that isobtained using the configuration as described with respect to FIG. 4 a.The orientation of the reflective elements 14 is as such to direct thesub-beams passing through polarization region 41 onto the areas of poles42 a and 42 b in the pupil plane and to direct the sub-beams passingthrough polarization region 44 onto the areas of poles 43 a and 43 b.

FIG. 5 a shows the polarization member 50 having the same configurationof polarization regions as in the previous embodiment. In thisembodiment, the position of the polarization member is changed, toenlarge with respect to that of FIG. 4 a the number of sub-beamstraversing region 51 having the first polarization direction and toreduce with respect to that of FIG. 4 a the number of sub-beamstraversing region 55 having the second polarization direction. FIG. 5 bshows a pupil plane 33 with a polarized quadrupole illumination modethat may be obtained using the configuration of FIG. 5 a. Under thecondition of keeping the intensity distribution in a specified areawithin the poles substantially identical to the case of FIG. 4 b, adifferent polarized illumination pole can be obtained, wherein the poles52 a and 52 b have become larger compared to the embodiment describedwith respect to FIG. 4 b and the poles 53 a and 53 b have become smallercompared to the embodiment of FIG. 4 b.

FIG. 6 a shows a further embodiment wherein the movable polarizationmember comprises an array of polarization regions wherein each regioncomprises a polarizing element configured to set a certain polarizationstate of a fraction or all of the plurality of sub-beams. In thisexample, the polarization member 60 comprises eight polarization regions61 to 68 arranged in four rows and two columns. This polarization membercomprises four regions 61-64 each with a circular polarizer and fourregions 65-68 each with a linear polarizer, wherein a first region 65has a first polarization direction, a second region 66 has a secondpolarization direction perpendicular to the first polarizationdirection, a third region 67 has a third polarization direction at anangle of 45 degrees with respect to the first and second polarizationdirections, and a fourth region 68 has a fourth polarization directionperpendicular to the third polarization direction. In an embodiment,each of the regions has a dimension allowing it to associate allreflective elements 14 with one region respectively. Hence, allavailable polarization directions as provided by regions 61-68 can beselected for all sub-beams. In an embodiment, the dimensions of theregions 61-68 are equal. Alternatively, at least two of the outerpolarization regions can have dimensions smaller than required toassociate all reflective elements with these regions without limitingthe amount of possible polarized illumination modes. FIG. 6 b shows thepupil plane 33 with a polarized annular illumination mode 69 that may beobtained using the configuration described with respect to FIG. 6 a. Theillumination mode comprises four polarization directions, approximatingan illumination mode with tangential polarization. The orientation ofthe reflective elements 14 is as such to direct the sub-beams passingthrough polarization regions 65-68 onto specific areas of the annularillumination region to create an annular illumination mode withapproximately tangential polarization.

FIGS. 7 a and 7 b show a further embodiment of the illuminator, whereinthe position of the polarization member 60 is different with respectthat of the previous embodiment and such that respectively four sets ofthe reflective elements 14 are associated with respectively regions 61,62, 65 and 66. FIG. 7 b shows the pupil plane 33 with a polarizedillumination mode that may be obtained using this embodiment. Theillumination mode comprises a quadrupole component with linearlypolarized poles 71 a, 71 b, 72 a and 72 b and a circularly polarizedconventional small-σ component 73. Different polarized illuminationmodes are possible by either changing the orientation of the reflectiveelements, by changing the position of the polarization member or bychanging both. For example, changing the position of the polarizationmember 60 in FIG. 7 a such that more reflective elements are associatedwith the linearly polarized regions can enlarge the four outer poles inFIG. 7 b at the cost of the center pole. Alternatively, with a samechange in position as described above, the intensity of the four outerpoles in FIG. 7 b can be increased at the cost of the intensity of thecenter pole, while keeping the dimensions of the pole unaltered. Anadvantage of this embodiment is that it offers a large flexibility inpolarized illumination modes and fast switching from a first polarizedillumination mode to a second polarized illumination mode.

While in the above embodiments the radiation was unpolarized and thebeam of radiation was polarized using the polarization member comprisingone or more polarizers, in many cases in lithography the radiationsource may deliver a linearly polarized beam of radiation, e.g. anexcimer laser. Hence, a polarizer cannot be applied to change thepolarization of the sub-beams. Therefore, in a further embodimentcomprising an excimer laser as a radiation source, the polarizationmember comprises an optical retarder to change the polarization stateand direction of one or more of the plurality sub-beams. Examples ofpossible retarders are a half-wave plate to change the polarizationdirection of the linearly polarized beam of radiation, a quarter-waveplate to change the polarization of the beam of radiation into acircular polarized state and a wedge to create a variation inpolarization across the beam of radiation.

FIG. 8 shows a further embodiment wherein the illumination system 80 hasthe same configuration as in FIG. 2 and furthermore comprisesconcentrating optics 81 to concentrate part of the radiation beam ontoone or more of the reflective elements. In this embodiment, theconcentrating optics comprises a micro-lens array, wherein eachmicro-lens is associated with one reflective element. Alternatively, theconcentrating optics may comprise a reflective surface area having aparabolic or hyperbolic cross-sectional shape or an array of hyperbolicor parabolic reflective surfaces. The concentrating optics separates thesub-beams and focuses each sub-beam on the associated reflectiveelement. Focusing the sub-beam reduces the amount of radiation incidenton the array of reflective elements 14 but outside the respectiveelements 14 a-14 e, thus limiting the amount of radiation loss.Furthermore, each reflective element delivers a sub-beam comprising asmall distribution of angles, which results, in the pupil plane, insub-beams having a larger cross-section to create more uniform intensitydistribution in the pupil plane. In this embodiment, the position of thepolarization member 13 is between the concentrating optics and the arrayof reflective elements 14. Alternatively, the polarization member may belocated at or near a field plane between the radiation source and theconcentrating optics.

FIGS. 9 a and 9 b show a further embodiment of the array of reflectiveelements 14 wherein a reflector plate RP is provided wherein eachreflective element R is supported on the reflector plate by resilientmembers S. In this embodiment, the reflector plate is provided with oneor more apertures A1, A2 and A3 associated with each reflective element,allowing the reflective element to be oriented by engaging thereflective element with one or more pins P1, P2 and P3 of respectivevarying length that are inserted in the respective apertures. Such anarrangement is known from US patent application publication US2004-0108467. Alternatively or additionally, an electrostatic ormicro-mechanical actuator may be used to set the orientation of thereflective element R.

In an embodiment, one or more of the polarization regions of thepolarization member are incorporated in a single optical structure. Thisarrangement prevents that radiation incident on edges between theregions may cause scattering and radiation loss. For the example ofpolarization regions comprising half-wave plates and quarter-waveplates, this can be achieved by e.g. selective etching of the opticalmaterial.

In an embodiment, the lithographic apparatus comprises an exchangemechanism configured to exchange the polarization member with anotherpolarization member or a dummy member. With this arrangement, moreflexibility is obtained to create various polarization modes thatrequire a different integration of the polarization regions into apolarization member. Further, by replacing the polarization member witha neutral optical element that does not influence the polarization stateof the beam of radiation, the lithographic apparatus can be used in aconventional way.

Although specific reference may be made in this text to the use oflithographic apparatus in the manufacture of ICs, it should beunderstood that the lithographic apparatus described herein may haveother applications, such as the manufacture of integrated opticalsystems, guidance and detection patterns for magnetic domain memories,flat-panel displays, liquid-crystal displays (LCDs), thin-film magneticheads, etc. The skilled artisan will appreciate that, in the context ofsuch alternative applications, any use of the terms “wafer” or “die”herein may be considered as synonymous with the more general terms“substrate” or “target portion”, respectively. The substrate referred toherein may be processed, before or after exposure, in for example atrack (a tool that typically applies a layer of resist to a substrateand develops the exposed resist), a metrology tool and/or an inspectiontool. Where applicable, the disclosure herein may be applied to such andother substrate processing tools. Further, the substrate may beprocessed more than once, for example in order to create a multi-layerIC, so that the term substrate used herein may also refer to a substratethat already contains multiple processed layers.

Although specific reference may have been made above to the use ofembodiments of the invention in the context of optical lithography, itwill be appreciated that the invention may be used in otherapplications, for example imprint lithography, and where the contextallows, is not limited to optical lithography. In imprint lithography atopography in a patterning device defines the pattern created on asubstrate. The topography of the patterning device may be pressed into alayer of resist supplied to the substrate whereupon the resist is curedby applying electromagnetic radiation, heat, pressure or a combinationthereof. The patterning device is moved out of the resist leaving apattern in it after the resist is cured.

The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g.having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm).

The term “lens”, where the context allows, may refer to any one orcombination of various types of optical components, includingrefractive, reflective, magnetic, electromagnetic and electrostaticoptical components.

While specific embodiments of the invention have been described above,it will be appreciated that the invention may be practiced otherwisethan as described. For example, the invention may take the form of acomputer program containing one or more sequences of machine-readableinstructions describing a method as disclosed above, or a data storagemedium (e.g. semiconductor memory, magnetic or optical disk) having sucha computer program stored therein.

The descriptions above are intended to be illustrative, not limiting.Thus, it will be apparent to one skilled in the art that modificationsmay be made to the invention as described without departing from thescope of the claims set out below.

1. A lithographic projection apparatus having an illumination systemcomprising: an array of reflective elements configured to define anintensity distribution of a radiation beam in accordance with anillumination mode; a polarization member positioned or positionablebefore the array of reflective elements in a path of the beam, thepolarization member configured to provide a polarization to the beam ofradiation, wherein the polarized radiation, in use, is incident upon oneor more reflective elements in the array and unpolarized or differentlypolarized radiation is incident upon one or more other reflectiveelements in the array; a support structure configured to support apatterning device, the patterning device configured to pattern the beamaccording to a desired pattern; a substrate table configured to hold asubstrate; and a projection system configured to project the patternedbeam onto a target portion of the substrate.
 2. The apparatus accordingto claim 1, wherein the polarization member comprises at least tworegions, a first region being associated with a first set selected outof the reflective elements and a second region being associated with asecond set selected out of the reflective elements, the first setdifferent from the second set, wherein at least one of the regionscomprises an optical element to obtain the polarization in a part of thebeam passing the at least one region, whereby the first and second setsof reflective elements are selected to obtain a polarized illuminationmode.
 3. The apparatus according to claim 2, comprising a device to movethe polarization member so as to change selection of reflective elementsin the first and second sets to obtain a further polarized illuminationmode.
 4. The apparatus according to claim 3, wherein the polarizationmember comprises an array of regions, at least one region having adimension such that the reflective elements are in the first set.
 5. Theapparatus according to claim 2, wherein the optical element comprises acircular polarizer or a linear polarizer.
 6. The apparatus according toclaim 1, further comprising a radiation system configured to generate abeam of linearly polarized radiation.
 7. The apparatus according toclaim 6, wherein the optical element is a quarter-wave plate, ahalf-wave plate or a wedge.
 8. The apparatus according to claim 2,wherein at least the first and second regions of the polarization memberare incorporated in a single optical structure.
 9. The apparatusaccording to claim 1, wherein the illumination system further comprisesconcentrating optics configured to concentrate a part of the beam ontoone or more of the reflective elements.
 10. The apparatus according toclaim 9, wherein the concentrating optics comprises a reflective surfacearea having a parabolic or hyperbolic cross-sectional shape or an arrayof hyperbolic or parabolic reflective surfaces.
 11. The apparatusaccording to claim 9, wherein the concentrating optics comprises amicro-lens array.
 12. The apparatus according to claim 9, wherein thepolarization member is located before the concentrating optics in a pathof the beam.
 13. The apparatus according to claim 9, wherein thepolarization member is located between the concentrating optics and thereflective elements.
 14. The apparatus according to claim 1, furthercomprising a reflector plate configured to support one or more of thereflective elements and a setting plate including a pin associated witheach such reflective element configured to set the orientation of thereflective element.
 15. The apparatus according to claim 1, wherein theillumination mode includes any of the following: conventional, dipole,asymmetric, quadrupole, hexapole and annular.
 16. A polarization membercomprising an array of polarization regions for use in a lithographicprojection apparatus as used in claim
 7. 17. A device manufacturingmethod, comprising: polarizing at least a portion of a radiation beamusing a polarization member; illuminating one or more reflectiveelements of a plurality of reflective elements with polarized radiationand illuminating one or more other reflective elements of the pluralityof reflective elements with unpolarized or differently polarizedradiation; directing the radiation to a patterning device via thereflective elements to obtain a polarized illumination mode; using thepatterning device to endow the beam with a pattern in its cross-section;and projecting the patterned beam onto at least a part of aradiation-sensitive material of a substrate.
 18. The method according toclaim 17, wherein the polarization member comprises at least tworegions, a first region being associated with a first set selected outof the reflective elements and a second region being associated with asecond set selected out of the reflective elements, the first setdifferent from the second set, wherein at least one of the regionscomprises an optical element to obtain the polarization in a part of thebeam passing the at least one region, whereby the first and second setsof reflective elements are selected to obtain a polarized illuminationmode.
 19. The method according to claim 18, further comprising movingthe polarization member so as to change selection of reflective elementsin the first and second sets to obtain a further polarized illuminationmode.
 20. The method according to claim 18, wherein the polarizationmember comprises an array of regions, at least one region having adimension such that the reflective elements are in the first set. 21.The method according to claim 17, further comprising dividing the beamof radiation into multiple sub-beams and directing each sub-beam to anassociated reflective element of the plurality of reflective elements.